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Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

Type:
Journal
Info:
J. Vac. Sci. Technol. B, Vol. 24, No. 5, Sep/Oct 2006
Date:
2006-08-01
DOI:
http://dx.doi.org/10.1116/1.2345205

Author Information

Name Institution
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Sang-Joon ParkPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Plasma Ta2O5

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-500C

Thermal Ta2O5

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 150-500C

Thermal TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 220C

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

1164