About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Ion and Photon Surface Interaction during Remote Plasma ALD of Metal Oxides

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (4) G88-G91 (2011)
Date:
2010-11-30

Author Information

Name Institution
H. B. ProfijtEindhoven University of Technology
P. KudlacekEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films


CAS#: 7782-44-7


CAS#: 7782-44-7


Plasma Al2O3


Plasma HfO2


Plasma TiO2


Plasma Ta2O5


Film/Plasma Properties

Characteristic: Ion Energy
Analysis: RFEA, Retarding Field Energy Analyzer

Characteristic: Ion Flux
Analysis: Custom

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: Electron Density, ne
Analysis: Langmuir Probe

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Minority Carrier Lifetime
Analysis: Photoconductance

Substrates

Silicon

Notes

Paper available as chapter 5 in on-line thesis.
688