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Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (7) P66-P74 (2010)
Date:
2010-04-16
DOI:
http://dx.doi.org/10.1149/1.3428705

Author Information

Name Institution
Stephen E. PottsEindhoven University of Technology
Wytze KeuningEindhoven University of Technology
E. LangereisEindhoven University of Technology
Gijs DingemansEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-400C

Thermal Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 25-400C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-400C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
methyl cyclopentadienyl tris(isopropoxide) titanium, Ti(CpMe)(O-i-Pr)3
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
Pentamethyl cyclopentadienyl titanium trimethoxide Ti(CpMe5)(OMe)3
CAS#: 123927-75-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-400C

Plasma Ta2O5

Hardware used: Oxford Instruments FlexAL
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Density
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

Si(100)

Notes

709