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Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode

Type:
Journal
Info:
Microelectronic Engineering 85 (2008) 39-44
Date:
2007-02-12
DOI:
http://dx.doi.org/10.1016/j.mee.2007.01.239

Author Information

Name Institution
Sang-Joon ParkPohang University of Science and Technology (POSTECH)
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Han-Bo-Ram LeePohang University of Science and Technology (POSTECH)
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Thermal Ru

Hardware used: Custom
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Ru

Hardware used: Custom
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Thermal Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Thermal TaNx

Hardware used: Custom
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma Ta2O5

Hardware used: Custom
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Substrates

TaN
Ta2O5
Silicon
SiO2

Notes

Si samples HF-dipped
Ru patterned in Cl2 RIE plasma
105