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Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 55, No. 1, pp. 32-37
Date:
2008-08-26
DOI:
http://oasis.postech.ac.kr/handle/2014.oak/28708

Author Information

Name Institution
Woo-Hee KimPohang University of Science and Technology (POSTECH)
Sang-Joon ParkPohang University of Science and Technology (POSTECH)
Doyoung KimPohang University of Science and Technology (POSTECH)
Hyungjun KimPohang University of Science and Technology (POSTECH)

Films

Thermal Ru

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 300-350C

Plasma Ta2O5

Hardware used: Custom Remote Inductively Coupled Plasma
PDMAT, (NMe2)5Ta, Pentakis (DiMethylAmido) Tantalum
CAS#: 19824-59-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon
SiO2
Ta2O5

Notes

736