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Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
J. Nanosci. Nanotechnol. 2011, Vol. 11, No. 1, p.671-674.
Date:
2011-01-01
DOI:
http://dx.doi.org/10.1166/jnn.2011.3222

Author Information

Name Institution
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Doo-In KimPusan National University
Sang Ouk KimKorea Advanced Institute of Science and Technology
Jung-Dae KwonKorea Institute of Materials Science
Jin-Seong ParkDankook University
Se-Hun KwonPusan National University

Films

Plasma RuTiN

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

SiO2

Notes

Ru deposition used N2/H2 plasma while TiN deposition used only N2 plasma.
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