Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

Type:
Journal
Info:
Microelectronic Engineering 149 (2016) 62 - 65
Date:
2015-09-22
DOI:
http://dx.doi.org/10.1016/j.mee.2015.09.015

Author Information

Name Institution
Ji-Hoon AhnKorea Maritime and Ocean University
Ja-Yong KimHynix Semiconductor

Films

Thermal RuO2

Hardware used: Unknown
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 230C

Plasma SrO

Hardware used: Unknown
Sr(DPM)2, Strontium(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate)
CAS#: 36830-74-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 225C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko SPA-400

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Substrates

SiO2
RuO2

Notes

458