About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 53, No. 4, October 2008, pp. 2123~2128
Date:
2008-10-01
DOI:
http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=2E1675C2-07F0-4B8F-95D6-086C4A25D270&globalmenu=3&localmenu=10

Author Information

Name Institution
Myoung-Gyun KoHanyang University
Woong-Sun KimHanyang University
Sang-Kyun ParkHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma Ru

Hardware used: Ever-tek model Plus 100
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Thermal Stability
Analysis: Anneal
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5700 ESCA

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Substrates

Silicon

Notes

15