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Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer

Type:
Journal
Info:
Surface & Coatings Technology 205 (2011) 5009-5013
Date:
2011-04-29
DOI:
https://doi.org/10.1016/j.surfcoat.2011.04.094

Author Information

Name Institution
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Yu-Ri ShinPusan National University
Won-Sub KwackPusan National University
Hyung Woo LeePusan National University
Young-Keun JeongPusan National University
Doo-In KimPusan National University
Hyun Chang KimMecharonics co. Ltd.
Se-Hun KwonPusan National University

Films

Plasma Ir

Hardware used: Custom Direct Capacitively Coupled Plasma
(ethylcyclopentadienyl) (1, 5-cyclooctodiene) Iridium, Ir(EtCp)(COD)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 290C

Plasma Ru

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Plasma TaNx

Hardware used: Custom Direct Capacitively Coupled Plasma
t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA
CAS#: 629654-53-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 230C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Substrates

TaN
SiO2

Notes

1725