t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe₂)₃Ta, TAIMATA, CAS# 629654-53-1

Your search for publications using this chemistry returned 7 record(s).

Number	Title
1	Plasma-enhanced atomic layer deposition of Ir thin films for copper adhesion layer
2	Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
3	Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
4	Effective work function tunability and interfacial reactions with underlying HfO₂ layer of plasma-enhanced atomic layer deposited TaC_xN_y films
5	Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
6	Role of the (Ta/Nb)O_x/Al₂O₃ interface on the flatband voltage shift for Al₂O₃/(Ta/Nb)O_x/Al₂O₃ multilayer charge trap capacitors
7	Improved electrical performances of plasma-enhanced atomic layer deposited TaC_xN_y films by adopting Ar/H₂ plasma

t-Amylimidotris(dimethylamido)tantalum(V), (NtAm)(NMe2)3Ta, TAIMATA, CAS# 629654-53-1