Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD
Type:
Journal
Info:
Journal of The Electrochemical Society, 155 (11) H885-H888 (2008)
Date:
2008-07-29
Author Information
| Name | Institution |
|---|---|
| Sung-Wook Kim | Korea Advanced Institute of Science and Technology |
| Se-Hun Kwon | Korea Advanced Institute of Science and Technology |
| Seong-Jun Jeong | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma TaNx
Plasma RuTaN
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 629654-53-1
CAS#: 32992-96-4
CAS#: 7727-37-9
CAS#: 1333-74-0
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Diffusion Barrier Properties
Analysis: Custom
Characteristic: Adhesion
Analysis: Tape Test
Substrates
| SiO2 |
Notes
| Investigated how Ru co-reactant impacts Ta phase |
| 1340 |