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Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition

Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 1391 - 1395
Date:
2009-11-27
DOI:
http://dx.doi.org/10.1016/j.mee.2009.11.163

Author Information

Name Institution
Bum Ho ChoiKorea Institute of Industrial Technology
Yong Hwan LimKorea Institute of Industrial Technology
Jong Ho LeeKorea Institute of Industrial Technology
Young Baek KimKorea Institute of Industrial Technology
Ho-Nyun LeeKorea Institute of Industrial Technology
Hong Kee LeeKorea Institute of Industrial Technology

Films

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 290C

Plasma TaNx

Hardware used: Custom
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Quanta 200 FEG

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Quanta 200 FEG

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Quanta 200 FEG

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Quanta 200 FEG

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Substrates

Si(100)
TaN

Notes

712