Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3], CAS# 169896-41-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 27 record(s).

NumberTitle
1Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method
2High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
3Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
4The Properties of Cu Thin Films on Ru Depending on the ALD Temperature
5Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
6Evaluation of plasma parameters on PEALD deposited TaCN
7Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
8Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
9A Bilayer Diffusion Barrier of ALD-Ru/ALD-TaCN for Direct Plating of Cu
10Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor
11Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
12Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
13Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
14Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
15Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
16Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
17Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
18Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
19High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
20Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
21Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
22Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
23Phase Formation in the Tantalum Carbonitride Film Deposited with Atomic Layer Deposition Using Ammonia
24Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
25The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
26Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
27Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent