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Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 27, (2009)
Date:
2009-05-04
DOI:
http://dx.doi.org/10.1116/1.3147215

Author Information

Name Institution
G. Bruce Rayner, Jr.University of Colorado, Boulder
Steven GeorgeUniversity of Colorado, Boulder

Films

Plasma TaNx

Hardware used: Custom Hot-wire
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 170C

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 170C

Film/Plasma Properties

Characteristic: Nucleation
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI10-155

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI10-155

Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI10-155

Substrates

Al2O3
Si(100)

Notes

748