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Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties

Type:
Journal
Info:
Chem. Vap. Deposition 2008, 14, 334–338
Date:
2008-12-16
DOI:
http://dx.doi.org/10.1002/cvde.200806702

Author Information

Name Institution
Moon-Kyun SongPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films

Plasma TaCN

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-840A

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NMR, Nuclear Magnetic Resonance
Diagnostic: Bruker DSX 400MHz

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet 6700

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: MAC Scientific Co., M18XHF

Substrates

SiO2

Notes

TBTDET vapor pressure information with reference.
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