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The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications

Type:
Conference Proceedings
Info:
Mat. Res. Soc. Symp. Proc. Vol. 766 E10.4.1
Date:
2003-01-01
DOI:
http://dx.doi.org/10.1557/PROC-766-E10.4

Author Information

Name Institution
Degang ChengState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma TaCN

Hardware used: TEL Phoenix CVD cluster tool
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Thermal TaCN

Hardware used: TEL Phoenix CVD cluster tool
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

Si(100) samples HF cleaned.
Barrier test samples Ar annealed 450, 550, and 650C.
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