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Barrier Characteristics of TaN Films Deposited by Using the Remote Plasma Enhanced Atomic Layer Deposition Method

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 45, No. 4, pp. 1069-1073
Date:
2004-06-04
DOI:
http://www.jkps.or.kr/journal/view.html?uid

Author Information

Name Institution
Ju Youn KimHanyang University
Keunwoo LeeHanyang University
Hee Ok ParkHanyang University
Young-Do KimHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films

Thermal TaNx

Hardware used: Custom
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Plasma TaNx

Hardware used: Custom
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Substrates

Si(100)

Notes

1195