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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B104 (2017)
Date:
2016-10-10
DOI:
http://dx.doi.org/10.1116/1.4965966

Author Information

Name Institution
Rémi VallatGrenoble Alps University (UGA)
Rémy GassilloudCEA - LETI MINATEC
Brice EychenneGrenoble Alps University (UGA)
Christophe ValléeGrenoble Alps University (UGA)

Films

Plasma Ta2O5

Hardware used: Altatech AltaCVD
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Jordan Valley JVX 5200

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2635 Source Meter

Substrates

Silicon
Ta2O5

Notes

Deposition hardware identified through reference 30.
Selectivity obtained by Ta2O5 etch back with NF3 plasma to nucleation delay prone substrate.
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