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Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(2), Mar/Apr 2012
Date:
2012-02-10
DOI:
http://dx.doi.org/10.1116/1.3684597

Author Information

Name Institution
Tonmoy ChakrabortyState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma RuTaN

Hardware used: Custom
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Dynamitron linear particle accelerator

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Conformality, Step Coverage
Analysis: FIB, Focused Ion Beam
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: STM, Scanning Tunneling Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Autoprobe CP

Substrates

SiO2

Notes

150C forming gas anneal
71