Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(2), Mar/Apr 2012
Date:
2012-02-10
DOI:
http://dx.doi.org/10.1116/1.3684597

Author Information

Name Institution
Tonmoy ChakrabortyState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma RuTaN

Hardware used: Custom
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: Dynamitron linear particle accelerator

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Conformality, Step Coverage
Analysis: FIB, Focused Ion Beam
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: STM, Scanning Tunneling Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Autoprobe CP

Substrates

SiO2

Notes

150C forming gas anneal
71