Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Ethylcyclopentadienyl pyrrolyl ruthenium, CAS# 0-0-0

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s).

NumberTitle
1Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers
2Characterization of Ultrathin PEALD-Grown RuCo Films for Diffusion Barrier and Copper Direct-Plate Applications
3Potassium Permanganate-Based Slurry to Reduce the Galvanic Corrosion of the Cu/Ru/TiN Barrier Liner Stack during CMP in the BEOL Interconnects
4Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
5Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
6Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
7Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
8High-aspect-ratio TSVs with thALD/PEALD tantalum-based barrier layer, thALD Ruthenium seed layer and subsequent copper electroplating
9Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
10Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications