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Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (9) H734-H739 (2009)
Date:
2009-06-03
DOI:
http://dx.doi.org/10.1149/1.3166184

Author Information

Name Institution
Liqi WuState University of New York at Albany
Eric T. EisenbraunState University of New York at Albany

Films

Plasma Cu

Hardware used: TEL Phoenix CVD cluster tool
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 85C

Plasma Ru

Hardware used: Custom
Ethylcyclopentadienyl pyrrolyl ruthenium
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Plasma TaNx

Hardware used: Custom
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: Perkin Elmer PHI600

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: Dynamitron linear particle accelerator

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: LEO 1550

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Microstructure
Analysis: FIB, Focused Ion Beam
Diagnostic: FEI 200 FIB

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Scintag XDS 2000

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone SYS-301 resistivity probing system

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: Custom

Substrates

Ru
Ta
TaN
SiO2

Notes

744