About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (6) H652-H656 (2010)
Date:
2009-12-09
DOI:
http://dx.doi.org/10.1149/1.3377003

Author Information

Name Institution
Suk-Hoon KimPohang University of Science and Technology (POSTECH)
Moon-Kyun SongPohang University of Science and Technology (POSTECH)
Shi-Woo RheePohang University of Science and Technology (POSTECH)

Films

Thermal TaCN

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Plasma TaCN

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Thermal TaNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Plasma TaNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Thermal TaCx

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Plasma TaCx

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Magna-IR 560

Characteristic: Gas Phase Species
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Midac FTIR

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL JSM-840A

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

SiO2

Notes

721