About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films

Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (11) H852-H859 (2009)
Date:
2009-10-01
DOI:
http://dx.doi.org/10.1149/1.3205457

Author Information

Name Institution
Christoph HoßbachTechnische Universität Dresden
S. TeichertQimonda
J. ThomasIFW Dresden
L. WildeFraunhofer Center Nanoelectronic Technology
H. WojcikTechnische Universität Dresden
B. AdolphiTechnische Universität Dresden
M. BertramTechnische Universität Dresden
U. MühleQimonda
Matthias AlbertTechnische Universität Dresden
S. MenzelIFW Dresden
B. HintzeQimonda
Johann W. BarthaTechnische Universität Dresden

Films

Plasma TaCN

Hardware used: Custom Direct Capacitively Coupled Plasma
TBTDET, tert-butylimido tris(diethylamino)tantalum, Ta[NEt2]3[=N-t-Bu)3]
CAS#: 169896-41-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-350C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EFTEM, Energy Filtered Transmission Electron Microscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Characteristic: Barrier Characteristics
Analysis: BTS, Bias Temperature Stressing
Diagnostic: -

Characteristic: Leakage Current
Analysis: BTS, Bias Temperature Stressing
Diagnostic: -

Substrates

Si(100)
SiO2

Notes

Si(100) samples run with and without HF-last
All samples received SC-1 clean.
Ion bombardment lead to film etch under certain conditions
25:1 trench structures studied
TaCN wetted carbon nanotubes
49