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PEALD of a Ruthenium Adhesion Layer for Copper Interconnects

Type:
Journal
Info:
Journal of The Electrochemical Society, 151(12) C753-C756 (2004)
Date:
2004-10-28
DOI:
http://dx.doi.org/10.1149/1.1809576

Author Information

Name Institution
Oh-Kyum KwonKorea Advanced Institute of Science and Technology
Se-Hun KwonKorea Advanced Institute of Science and Technology
Hyoung-Sang ParkGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ru

Hardware used: Custom
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

TiN

Notes

Ru(EtCp)2 vapor pressure is 180mTorr at 80C.
Interesting combination of O2 thermal and H2 plasma experiment shows importance of adsorbed O on Ru growth during processing.
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