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Texture of atomic layer deposited ruthenium

Type:
Journal
Info:
Microelectronic Engineering 87 (2010) 1879-1883
Date:
2009-11-04
DOI:
https://doi.org/10.1016/j.mee.2009.11.020

Author Information

Name Institution
Jan MusschootGhent University
Qi XieFudan University
Davy DeduytscheGhent University
K. De KeyserGhent University
Delphine LongrieGhent University
Jo HaemersGhent University
Sven Van den BergheSCK-CEN
Ronald L. Van MeirhaegheGhent University
J. D’HaenHasselt University
Christophe DetavernierGhent University

Films

Plasma Ru

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Plasma TiN

Hardware used: Custom Remote Inductively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: VG Scientific ESCALAB 220iXL

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Quanta 200 FEG

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: Philips CM12

Substrates

Si3N4
Silicon
TiN

Notes

Nice table comparing crystallinity of various ALD Ru reported in the literature.
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