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The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2

Type:
Journal
Info:
Phys. Status Solidi A 209, No. 2, 302-305 (2012)
Date:
2011-10-24
DOI:
http://dx.doi.org/10.1002/pssa.201127280

Author Information

Name Institution
Taeyong ParkHanyang University
Dongjin ChoiHanyang University
Hagyoung ChoiHanyang University
Hyeongtag JeonHanyang University

Films

Plasma Ru

Hardware used: Custom Remote Inductively Coupled Plasma
Bis(EthylCycloPentadienyl)Ruthenium, Ru(EtCp)2
CAS#: 32992-96-4
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

Looked at pretreating the SiO2 substrate with Ar, H2, O2, NH3, and nothing.
116