Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (5) F34-F37 (2006)
Date:
2006-01-08
Author Information
| Name | Institution |
|---|---|
| Pan Kwi Park | Korea Advanced Institute of Science and Technology |
| Jae-Sung Roh | Hynix Semiconductor |
| Byung Ho Choi | Kumoh National Institute of Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma HfO2
Thermal HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Wet Etch Resistance
Analysis: Custom
Substrates
| Si(100) |
Notes
| 1311 |