Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 24, 1327-1332 (2006)
Date:
2006-03-29
Author Information
| Name | Institution |
|---|---|
| Jin-Seong Park | Korea Advanced Institute of Science and Technology |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma TiN
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 7550-45-0
CAS#: 7727-37-9
CAS#: 1333-74-0
Plasma TiSiN
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 7550-45-0
CAS#: 7803-62-5
CAS#: 7727-37-9
CAS#: 1333-74-0
Film/Plasma Properties
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Diffusion Barrier Properties
Analysis: Four-point Probe
Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Substrates
| SiO2 |
Notes
| 1308 |