Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 (11) H303-H305 (2008)
Date:
2008-07-16
DOI:
http://dx.doi.org/10.1149/1.2973336

Author Information

Name Institution
Sung-Wook KimKorea Advanced Institute of Science and Technology
Se-Hun KwonKorea Advanced Institute of Science and Technology
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung SDI Center Research and Development
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ir

Hardware used: Custom Direct Capacitively Coupled Plasma
(ethylcyclopentadienyl) (1, 5-cyclooctodiene) Iridium, Ir(EtCp)(COD)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

TiN

Notes

1341