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A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (9) G282-G284 (2006)
Date:
2006-05-11
DOI:
http://dx.doi.org/10.1149/1.2216593

Author Information

Name Institution
Jung-Dae KwonKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung Display Co.
Han-Choon LeeDongbuAnam Semiconductor
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ta

Hardware used: Custom Direct Capacitively Coupled Plasma
TaF5, Tantalum Pentafluoride
CAS#: 7783-71-3
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Other TaNx

Hardware used: Custom Direct Capacitively Coupled Plasma
TaF5, Tantalum Pentafluoride
CAS#: 7783-71-3
H2, Hydrogen
CAS#: 1333-74-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

1163