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Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 4 (7) F13-F14 (2001)
Date:
2001-02-24
DOI:
http://dx.doi.org/10.1149/1.1377835

Author Information

Name Institution
Hyun-Jung SongKorea Advanced Institute of Science and Technology
Choon-Soo LeeGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ta2O5

Hardware used: Custom Direct Capacitively Coupled Plasma
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 260C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4275A LCR

Substrates

Si(100)

Notes

1165