Ta(OC₂H₅)₅, Ta(OEt)₅, Tantalum(V) ethoxide, CAS# 6074-84-6

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 9 record(s).

Number	Title
1	Hydrogen radical enhanced atomic layer deposition of TaOx: saturation studies and methods for oxygen deficiency control
2	Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
3	Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
4	Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition
5	Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
6	In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
7	Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
8	Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
9	Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage