Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application

Type:
Journal
Info:
Thin Solid Films 500 (2006) 231 - 236
Date:
2005-11-08
DOI:
https://doi.org/10.1016/j.tsf.2005.11.014

Author Information

Name Institution
Woo Seok YangElectronics and Telecommunication Research Institute, (ETRI)
Sung Weon KangElectronics and Telecommunication Research Institute, (ETRI)

Films

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Thermal Ta2O5

Hardware used: Custom
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma ZrO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Silicon
Au

Notes

1294