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In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2017, 9 (15), pp 13286-13292
Date:
2017-03-28
DOI:
http://dx.doi.org/10.1021/acsami.7b00778

Author Information

Name Institution
Konstantin V. EgorovMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
Pavel S. ChizhovMoscow State University
Yuri Yu. LebedinskiiMoscow Institute of Physics and Technology
Cheol Seong HwangSeoul National University
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films

Plasma Ta2O5

Hardware used: Picosun R200
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Thermal Ta2O5

Hardware used: Picosun R200
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: SENTECH SE500adv

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF TofSIMS 5

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Resistive Switching
Analysis: -
Diagnostic: -

Substrates

TiN
Silicon

Notes

994