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Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Ulrich KreissigInstitute of Ion Beam Physics and Materials Research
Markku A. LeskeläUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki

Films

Plasma Ta2O5

Hardware used: ASM Microchemistry F-120
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal Ta2O5

Hardware used: ASM Microchemistry F-120
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Other Ta2O5

Hardware used: ASM Microchemistry F-120
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
O2, Oxygen
CAS#: 7782-44-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: Spectrophotometry
Diagnostic: Hitachi U-2000 Spectrophotometer

Characteristic: Refractive Index
Analysis: Spectrophotometry
Diagnostic: Hitachi U-2000 Spectrophotometer

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 2400 Source Meter

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Substrates

Glass
Silicon
Pt

Notes

Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
Used Sairem SURF451 surfatron plasma source.
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