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Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2011-10-19
DOI:
http://dx.doi.org/10.1116/1.3659699

Author Information

Name Institution
Maarit I. KariniemiUniversity of Helsinki
Jaakko T. NiinistöUniversity of Helsinki
Marko VehkamäkiUniversity of Helsinki
Marianna KemellUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki
Matti PutkonenBeneq Oy

Films

Plasma SiO2

Hardware used: Beneq TFS-200
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: Beneq TFS-200
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma Ta2O5

Hardware used: Beneq TFS-200
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 220C

Plasma Ag

Hardware used: Beneq TFS-200
Ag(FOD)(PEt3), Triethylphosphine (6,6,7,7,8,8,8- heptafluoro-2,2- dimethyl-3,5- octanedionate) silver(I)
CAS#: 165461-74-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Substrates

Silicon
SiO2
TiN

Notes

Aeronex GateKeeper and Entegris GateKeeper gas purifiers used.
Beneq TFS-200 study on high aspect ratio conformality of SiO2, HfO2, Al2O3, TiO2, Ta2O5, and Ag PEALD films.
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