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Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Thin Solid Films 446 (2004) 227 - 231
Date:
2003-09-05
DOI:
https://doi.org/10.1016/j.tsf.2003.10.004

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma AlN

Hardware used: Custom Direct Capacitively Coupled Plasma
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Topometric Explorer

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Si(100)

Notes

1236