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TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 2 H19-H21 2008
Date:
2007-11-26
DOI:
http://dx.doi.org/10.1149/1.2813881

Author Information

Name Institution
Woojin JeonKorea Advanced Institute of Science and Technology
Hoi-Sung ChungKorea Advanced Institute of Science and Technology
Daekwon JooKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma TiO2

Hardware used: Unknown
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Ir

Hardware used: Unknown
(ethylcyclopentadienyl) (1, 5-cyclooctodiene) Iridium, Ir(EtCp)(COD)
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: CV, Cyclic Voltammetry
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: CV, Cyclic Voltammetry
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

Ir
Silicon

Notes

RTA on some TiO2-Al2O3 films.
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