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Formation of aluminum nitride thin films as gate dielectrics on Si(100)

Type:
Journal
Info:
Journal of Crystal Growth 266 (2004) 568 - 572
Date:
2004-03-04
DOI:
https://doi.org/10.1016/j.jcrysgro.2004.03.016

Author Information

Name Institution
Yong Ju LeeLawrence Berkeley National Laboratory

Films

Plasma AlN

Hardware used: Custom Direct Capacitively Coupled Plasma
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
NH3, Ammonia
CAS#: 7664-41-7
Ar, Argon
CAS#: 7440-37-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 3010

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 3010

Substrates

Si(100)

Notes

1235