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Radical Enhanced Atomic Layer Deposition of Metals and Oxides

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
https://helda.helsinki.fi/items/94be6d52-6c1f-4648-8342-60e656716a52

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki

Films

Plasma TiN

Hardware used: ASM Microchemistry F-120
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma TiN

Hardware used: ASM Microchemistry F-120
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
Al(OEt)3, Al(OC2H5)3, Aluminum Ethoxide, Aluminum Triethoxide, Triethoxyaluminum, Aluminium Triethanolate
CAS#: 555-75-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma AlN

Hardware used: ASM Microchemistry F-120
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma Ru

Hardware used: ASM Microchemistry F-120
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Ta

Hardware used: ASM Microchemistry F-120
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Nb

Hardware used: ASM Microchemistry F-120
Niobium Ethoxide, Nb(OC2H5)5, Nb(OEt)5
CAS#: 3236-82-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Hf

Hardware used: ASM Microchemistry F-120
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Cr

Hardware used: ASM Microchemistry F-120
Chromium(III) acetylacetonate, Cr(C5H7O2)3, Cr(acac)3
CAS#: 21679-31-2
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Mo

Hardware used: ASM Microchemistry F-120
Molybdenum(V) chloride, [MoCl5]2
CAS#: 10241-05-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Ni

Hardware used: ASM Microchemistry F-120
bis(isopropoxidedimethylamido)nickel, Ni(Oi-PrN(CH3)2)2
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma CuOx

Hardware used: ASM Microchemistry F-120
Cu(TMHD)2, Cu(THD)2, bis(2,2,6,6-tetramethyl-3,5-heptanedionate) copper, Copper(II) dipivaloylmethanate
CAS#: 14040-05-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma CuOx

Hardware used: ASM Microchemistry F-120
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SrTiO3

Hardware used: ASM Microchemistry F-120
bis(cyclopentadienyl)strontium, SrCp2
CAS#: 0-0-0
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: ASM Microchemistry F-120
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZnO

Hardware used: ASM Microchemistry F-120
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Nb2O5

Hardware used: ASM Microchemistry F-120
Niobium Ethoxide, Nb(OC2H5)5, Nb(OEt)5
CAS#: 3236-82-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Cr2O3

Hardware used: ASM Microchemistry F-120
Chromium(III) acetylacetonate, Cr(C5H7O2)3, Cr(acac)3
CAS#: 21679-31-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma RuO2

Hardware used: ASM Microchemistry F-120
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma NiOx

Hardware used: ASM Microchemistry F-120
bis(isopropoxidedimethylamido)nickel, Ni(Oi-PrN(CH3)2)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

Thesis covers 5 materials: Al2O3, Ta2O5, TiO2, Cu, and Ag. Films listed on this page either did not work at the chosen experimental conditions or the resulting films were less studied. Consult tables 6 and 10 in the thesis for further information.
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