Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Radical Enhanced Atomic Layer Deposition of Metals and Oxides

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
https://helda.helsinki.fi/items/94be6d52-6c1f-4648-8342-60e656716a52

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki

Films

Plasma TiN

Hardware used: ASM Microchemistry F-120
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma TiN

Hardware used: ASM Microchemistry F-120
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
Al(OEt)3, Al(OC2H5)3, Aluminum Ethoxide, Aluminum Triethoxide, Triethoxyaluminum, Aluminium Triethanolate
CAS#: 555-75-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Al

Hardware used: ASM Microchemistry F-120
AlCl3, Aluminum Trichloride
CAS#: 7446-70-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma AlN

Hardware used: ASM Microchemistry F-120
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma Ru

Hardware used: ASM Microchemistry F-120
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Ta

Hardware used: ASM Microchemistry F-120
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Nb

Hardware used: ASM Microchemistry F-120
Niobium Ethoxide, Nb(OC2H5)5, Nb(OEt)5
CAS#: 3236-82-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Hf

Hardware used: ASM Microchemistry F-120
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Cr

Hardware used: ASM Microchemistry F-120
Chromium(III) acetylacetonate, Cr(C5H7O2)3, Cr(acac)3
CAS#: 21679-31-2
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Mo

Hardware used: ASM Microchemistry F-120
Molybdenum(V) chloride, [MoCl5]2
CAS#: 10241-05-1
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma Ni

Hardware used: ASM Microchemistry F-120
bis(isopropoxidedimethylamido)nickel, Ni(Oi-PrN(CH3)2)2
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma CuOx

Hardware used: ASM Microchemistry F-120
Cu(TMHD)2, Cu(THD)2, bis(2,2,6,6-tetramethyl-3,5-heptanedionate) copper, Copper(II) dipivaloylmethanate
CAS#: 14040-05-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma CuOx

Hardware used: ASM Microchemistry F-120
copper(II) acetylacetonate, bis(2,4-pentanedionato) copper(II), cupric acetylacetonate, Cu(acac)2
CAS#: 13395-16-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SrTiO3

Hardware used: ASM Microchemistry F-120
bis(cyclopentadienyl)strontium, SrCp2
CAS#: 0-0-0
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma SiO2

Hardware used: ASM Microchemistry F-120
TEOS, Si(OC2H5)4, TetraEthyl OrthoSilicate
CAS#: 78-10-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma ZnO

Hardware used: ASM Microchemistry F-120
DMZ, DiMethylZinc, ZnMe2, Zn(CH3)2
CAS#: 544-97-8
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Nb2O5

Hardware used: ASM Microchemistry F-120
Niobium Ethoxide, Nb(OC2H5)5, Nb(OEt)5
CAS#: 3236-82-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma Cr2O3

Hardware used: ASM Microchemistry F-120
Chromium(III) acetylacetonate, Cr(C5H7O2)3, Cr(acac)3
CAS#: 21679-31-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma RuO2

Hardware used: ASM Microchemistry F-120
Bis(cyclopentadienyl)ruthenium, Ruthenocene, Cp2Ru, (C5H5)2Ru
CAS#: 1287-13-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma NiOx

Hardware used: ASM Microchemistry F-120
bis(isopropoxidedimethylamido)nickel, Ni(Oi-PrN(CH3)2)2
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

Thesis covers 5 materials: Al2O3, Ta2O5, TiO2, Cu, and Ag. Films listed on this page either did not work at the chosen experimental conditions or the resulting films were less studied. Consult tables 6 and 10 in the thesis for further information.
87