Publication Information

Title:
Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Antti RahtuUniversity of Helsinki
Timo SajavaaraUniversity of Helsinki
Kai ArstilaUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Adhesion
Analysis: Tape Test

Substrates

Glass
Silicon
SiLK
Cu
TaN
TiN

Keywords

Copper
Interconnect

Notes

Some of the Si samples were HF etched.
Compares impurities with and without point-of-use gas purifiers
Used Sairem SURF451 surfatron plasma source.
Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
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