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Publication Information

Title: Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage

Type: Thesis

Info: Niskanen Thesis

Date: 2006-11-10

DOI: No DOI

Author Information

Name

Institution

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

University of Helsinki

Films

Deposition Temperature Range N/A

13395-16-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Bruker-Axs D8 Advance diffractometer/reflectometer

Thickness

XRR, X-Ray Reflectivity

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Morphology, Roughness, Topography

XRR, X-Ray Reflectivity

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Thermomicroscopes Autoprobe CPResearch system

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

JEOL JSM-7400F

Resistivity, Sheet Resistance

Four-point Probe

Alessi C4S Four Point Probe

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Adhesion

Scotch Tape Test

Unknown

Substrates

Glass

Silicon

SiLK

Cu

TaN

TiN

Keywords

Copper

Interconnect

Notes

Some of the Si samples were HF etched.

Compares impurities with and without point-of-use gas purifiers

Used Sairem SURF451 surfatron plasma source.

Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.

Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.

82

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