Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Timo T. HatanpääUniversity of Helsinki
Kai ArstilaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki

Films

Plasma Ag

Hardware used: ASM Microchemistry F-120
Ag(DMP)(TEP), (2,2-dimethylpropionato) silver(I) triethylphosphine
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Bruker-Axs D8 Advance diffractometer/reflectometer

Characteristic: Thickness
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Oxford INCA 350 Energy Spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: Bruker Nonius KappaCCD diffractometer

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Alessi C4S Four Point Probe

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Substrates

Glass
Silicon

Notes

Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
Used Sairem SURF451 surfatron plasma source.
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