Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage

Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Kai ArstilaUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki
Markku A. LeskeläUniversity of Helsinki

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: Spectrophotometry

Characteristic: Film Detection,Penetration
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Film Detection,Penetration
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Refractive Index
Analysis: Spectrophotometry

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Glass
Silicon
ITO
Pt
Polyethylene
Paper
Wool

Notes

Reference 190 - TMA decomposes at 375C.
Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
Used Sairem SURF451 surfatron plasma source.
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