Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI
Author Information
| Name | Institution |
|---|---|
| Antti Niskanen | University of Helsinki |
| Kai Arstila | University of Helsinki |
| Mikko K. Ritala | University of Helsinki |
| Markku A. Leskelä | University of Helsinki |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: Spectrophotometry
Characteristic: Film Detection,Penetration
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Film Detection,Penetration
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Refractive Index
Analysis: Spectrophotometry
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Glass |
| Silicon |
| ITO |
| Pt |
| Polyethylene |
| Paper |
| Wool |
Notes
| Reference 190 - TMA decomposes at 375C. |
| Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers. |
| Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source. |
| Used Sairem SURF451 surfatron plasma source. |
| 84 |