Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI
Author Information
Name | Institution |
---|---|
Antti Niskanen | University of Helsinki |
Ulrich Kreissig | Institute of Ion Beam Physics and Materials Research |
Markku A. Leskelä | University of Helsinki |
Mikko K. Ritala | University of Helsinki |
Films
Plasma Ta2O5
Thermal Ta2O5
Other Ta2O5
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: Spectrophotometry
Characteristic: Refractive Index
Analysis: Spectrophotometry
Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Substrates
Glass |
Silicon |
Pt |
Notes
Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers. |
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source. |
Used Sairem SURF451 surfatron plasma source. |
86 |