Publication Information

Title:
Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
Type:
Thesis
Info:
Niskanen Thesis
Date:
2006-11-10
DOI:
No DOI

Author Information

Name Institution
Antti NiskanenUniversity of Helsinki
Ulrich KreissigInstitute of Ion Beam Physics and Materials Research
Markku A. LeskeläUniversity of Helsinki
Mikko K. RitalaUniversity of Helsinki

Films

Plasma Ta2O5


Thermal Ta2O5


Other Ta2O5


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity

Characteristic: Thickness
Analysis: Spectrophotometry

Characteristic: Refractive Index
Analysis: Spectrophotometry

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Substrates

Glass
Silicon
Pt

Keywords

High-k Dielectric Thin Films

Notes

Plasma source limitations require it to be kept on during the entire run with slow power ramping between high and low powers.
Portion of the reactor was replaced by polycarbonate to be compatible with the plasma source.
Used Sairem SURF451 surfatron plasma source.
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