Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Hafnium Tetrachloride, HfCl4, CAS# 13499-05-3

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 8 record(s).

NumberTitle
1High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
2Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
3Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
4Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
5Pyroelectric and Ferroelectric Properties of Hafnium Oxide Doped with Si via Plasma Enhanced ALD
6Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing
7Radical Enhanced Atomic Layer Deposition of Metals and Oxides
8Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V