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Atomic Layer Deposition: An Enabling Technology for Microelectronic Device Manufacturing

Type:
Conference Proceedings
Info:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference
Date:
2007-11-06
DOI:
http://dx.doi.org/10.1109/ASMC.2007.375064

Author Information

Name Institution
Fourmun LeeASM America Inc.
Steven MarcusASM America Inc.
Eric SheroASM America Inc.
Glen WilkASM America Inc.
Johan SwertsASM America Inc.
Jan Willem MaesASM America Inc.
Tom BlombergASM America Inc.
Annelies DelabieIMEC
Mickaël Gros-JeanSTMicroelectronics
Emilie DeloffreSTMicroelectronics

Films

Thermal HfO2

Hardware used: ASM Pulsar 3000
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Thermal HfSiOx

Hardware used: ASM Pulsar 3000
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
SiCl4, Silicon Tetrachloride
CAS#: 10026-04-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Plasma Ta2O5

Hardware used: ASM EmerALD
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Thermal Al2O3

Hardware used: ASM Pulsar 3000
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Density
Analysis: -
Diagnostic: -

Characteristic: Porosity
Analysis: -
Diagnostic: -

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Substrates

Notes

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