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Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2

Type:
Journal
Info:
J. Phys. Chem. C, 2016, 120 (11), pp 5958-5967
Date:
2016-03-11
DOI:
http://dx.doi.org/10.1021/acs.jpcc.5b05286

Author Information

Name Institution
Bo-Eun ParkYonsei University
Il-Kwon OhYonsei University
Chang Wan LeeYonsei University
Gyeongho LeeYonsei University
Young-Han ShinUniversity of Ulsan
Clement Lansalot-MatrasAir Liquide
Wontae NohAir Liquide
Hyungjun KimYonsei University
Han-Bo-Ram LeeIncheon National University

Films

Plasma HfO2

Hardware used: Unknown
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Unknown
Bis(ethylcyclopentadienyl)hafnium(IV) dichloride, Hf(C2H5C5H4)2Cl2, Hf(EtCp)2Cl2
CAS#: 78205-93-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Substrates

Notes

808