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Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning

Type:
Journal
Info:
Microelectronic Engineering 86 (2009) 1529 - 1535
Date:
2009-03-10
DOI:
http://dx.doi.org/10.1016/j.mee.2009.03.090

Author Information

Name Institution
Matty CaymaxIMEC
Guy BrammertzIMEC
Annelies DelabieIMEC
Sonja SionckeIMEC
Dennis LinIMEC
Marco ScarrozzaIMEC
Geoffrey PourtoisIMEC
Wei-E WangIMEC
Marc MeurisIMEC
Marc HeynsIMEC

Films

Thermal HfO2

Hardware used: Unknown
Hafnium Tetrachloride, HfCl4
CAS#: 13499-05-3
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Unknown
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Thermal Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

GaAs

Notes

300C deposition temperatures inferred from text. Might be wrong.
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