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Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(2), Mar/Apr 2012
Date:
2012-02-17
DOI:
http://dx.doi.org/10.1116/1.3687937

Author Information

Name Institution
Mustafa AlevliBilkent University
Çağla ÖzgitBilkent University
İnci DönmezBilkent University
Necmi BiyikliBilkent University

Films

Plasma AlN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Optical Properties
Analysis: PL, PhotoLuminescence
Diagnostic: Cary Eclipse Fluoresence Spectrophotometer

Characteristic: Optical Properties
Analysis: Optical Transmission
Diagnostic: Cary Varian 100 UV-Vis Spectrometer

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker Vertex 70

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Substrates

Si(100)
Si(111)
Quartz
Sapphire

Notes

TMA decomposition above 300 (ref 11).
Si RCA cleaned + HF dip.
96