Comparative study on nitridation and oxidation plasma interface treatment for AlGaN/GaN MIS-HEMTs with AlN gate dielectric
Type:
Journal
Info:
Mater. Res. Express 4 (2017) 025902
Date:
2016-11-08
Author Information
| Name | Institution |
|---|---|
| Jie-Jie Zhu | Xidian University |
| Xiao-Hua Ma | Xidian University |
| Bin Hou | Xidian University |
| Li-Xiang Chen | Xidian University |
| Qing Zhu | Xidian University |
| Yue Hao | Xidian University |
Films
Film/Plasma Properties
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| AlGaN |
Notes
| 1000 |